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| inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc silicon pnp power transistor 2N5401 description pnp high-voltage transistor low current (max. 300 ma) high voltage (max. 160 v) complements to 2n5551. applications designed for switching and amplification in high voltage applications , such as telephony applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -180 v v ceo collector-emitter voltage -160 v v ebo emitter-base voltage -6 v i c collector current-continuous 0.3 a i cm collector current-peak 0.6 a i bm base current-peak 0.1 a p c collector power dissipation @ t a <50 0.63 w j junction temperature 150 t stg storage temperature range -65~150
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc silicon pnp power transistor 2n5551 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ce(sat)-1 collector-emitter sa turation voltage i c = 10ma; i b = 1ma -0.15 v v ce(sat)-2 collector-emitter sa turation voltage i c = 50ma; i b = 5ma -0.2 v v be(sat)-1 base-emitter satu ration voltage i c = 10ma; i b = 1ma -1.0 v v be(sat)-2 base-emitter satu ration voltage i c = 50ma; i b = 5ma -1.0 v i cbo collector cutoff current v cb = 120v; i e = 0 v cb = 120v; i e = 0 t a = 100 -50 -50 na ua i ebo emitter cutoff current v eb = 4v; i c = 0 -50 na h fe dc current gain i c = 1ma ; v ce = 5v 80 h fe dc current gain i c = 10ma ; v ce = 5v 80 250 h fe dc current gain i c = 50ma ; v ce = 5v 30 f t current-gain?bandwidth product i c = 10ma ; v ce = 10v 100 300 mhz |
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